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BL6N70F

GME
Part Number BL6N70F
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description N-Channel Power MOSFET FEATURES  RDS(ON)=1.6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically...
Datasheet PDF File BL6N70F PDF File

BL6N70F
BL6N70F

Overview
N-Channel Power MOSFET FEATURES  RDS(ON)=1.
6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically 45pF)  High switching speed.
Production specification BL6N70F ITO-220AB MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value VDS Drain-Source Voltage 700 Unit V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 ±30 TC=25℃ 6 TC=100°C 4 24 V A A Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) 100 W 1.
04 W/℃ 100 mJ Avalanche Energy (Repetitive(Note 2)) 13 mJ Thermal Resistance,Junction-to-Ambient 62.
5 ℃/W Thermal Resistance,Junction-...


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