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BL4N50F

GME

N-Channel Power MOSFET


Description
4A,500V N-Channel Power Mosfet FEATURES  RDS(ON) =2.0Ω@ VGS = 10V  High Switching Speed  100% Avalanche Tested Pb Lead-free Production specification BL4N50F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM EAS EAR dv/dt Gate -Source voltage Continuous Drain Current Pulsed Drai...



GME

BL4N50F

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