N-Channel Power MOSFET
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-...
Description
2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N60F
ITO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS ID
IDP VGSS
Drain-Source voltage Drain current continuous
Drain current Pulsed (Note2) Gate -Source voltage
(TC=25℃) (TC=100℃)
600 2.0 1.26
8.0
±30
V A
A V
IAR EAR EAS dv/dt
Avalanche Current (Note2)
2.0
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
4.5
A mJ mJ V/ns
Power Dissipation
(TC=25℃) 45
W
PD
Derate above 25℃ 0.36
W/℃
TJ Junction Temperature
+150
℃
TSTG RθJA
Storage Temperature Thermal Resistance Junction-Ambien...
Similar Datasheet