BL1N60F

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =9.3Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 5.0nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 3.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL1N60F ITO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDS Drain-Source voltage 600 V VGS Gate -Source voltage ±30 V Continuous Drain current TC=25℃ 1.2 A ID Continuous Drain current TC=100℃ 0.76 A EAS Single Pulse Avalanche Energy(Note3) 50 EAR Avalanche Energy,Repetitive(Note2) 4.0 IAR Avalanche Current(Note2) 1.2 ISD Continuous Drain-Source Current 1.2 mJ mJ A A ISM Pulsed Drain-Source Current 4.8 A dv/dt Peak Diode Recovery dv/dt(Note4) 4.5 V/ns Power Dissipation PD Derating Fcator above 25℃ 40 W 0.32 W/℃ RθJC Junction-to-Case ...