BL18N25F

N-Channel Power MOSFET FEATURES  R =0.16Ω @ V =10V DS(ON) GS  High switching speed APPLICATIONS  N-Channel Power MOSFET.  Switching Applications. Production specification BL18N25F MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter Value ITO-220AB Unit VDS Drain-Source Voltage 25 V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1 Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2)) Avalanche Energy (Repetitive(Note 3)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range ±20 V 18 A 72 A 40 W 360 mJ 945 mJ 62.5 ℃/W 3.1 ℃/W -55 to +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width ...