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BL15N30F Dataheets PDF



Part Number BL15N30F
Manufacturers GME
Logo GME
Description N-Channel Power MOSFET
Datasheet BL15N30F DatasheetBL15N30F Datasheet (PDF)

N-Channel Power MOSFET FEATURES  RDS(on) = 240 m  (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low Crss (Typ. 17 pF)  100% Avalanche Tested  Improved dv/dt Capability  RoHS Compliant APPLICATIONS  Lighting  Uninterruptible Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter VDS Drain-Source Voltage VGS ID IDM EAS EAR IAR dv/dt PD Gate -Source Voltage Drain Current Continuous at TC=25℃ Continuous at TC=100℃ Drain Current(pulsed)N.

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N-Channel Power MOSFET FEATURES  RDS(on) = 240 m  (Typ.) @ VGS = 10 V, ID = 7.5 A  Low Gate Charge (Typ. 28 nC)  Low Crss (Typ. 17 pF)  100% Avalanche Tested  Improved dv/dt Capability  RoHS Compliant APPLICATIONS  Lighting  Uninterruptible Power Supply MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter VDS Drain-Source Voltage VGS ID IDM EAS EAR IAR dv/dt PD Gate -Source Voltage Drain Current Continuous at TC=25℃ Continuous at TC=100℃ Drain Current(pulsed)Note1 Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Avalanche Current (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation TC=25℃ Derate above 25°C RθJA RθJC Tj Tstg Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range S059 Rev.A Production specification BL15N30F ITO-220AB Value 300 Unit V ±30 15 9 60 V A A 731 mJ 17 mJ 15 A 15 V/ns 170 W 1.45 W/℃ 62.5 .


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