Document
N-Channel Power MOSFET
FEATURES
RDS(on) = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 17 pF) 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant
APPLICATIONS
Lighting Uninterruptible Power Supply
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol Parameter
VDS Drain-Source Voltage
VGS ID IDM EAS EAR IAR dv/dt
PD
Gate -Source Voltage
Drain Current Continuous at TC=25℃ Continuous at TC=100℃
Drain Current(pulsed)Note1
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Avalanche Current (Note 1) Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
TC=25℃ Derate above 25°C
RθJA RθJC Tj Tstg
Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range
S059 Rev.A
Production specification
BL15N30F
ITO-220AB
Value 300
Unit V
±30 15 9 60
V A A
731 mJ
17 mJ
15 A
15 V/ns 170 W 1.45 W/℃ 62.5 .