DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
PXT8550
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
...
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
PXT8550
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Base 2 = Collector 3 = Emitter
.066(1.70) .059(1.50)
SOT-89
.063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating -40 -25 -5 -1500 300 +150
-55 to +150
Unit
V
V
V
mA
mW oC oC
.167(4.25) .159(4.05)
.102(2.60) .095(2.40)
123
.020(0.51) .014(0.36)
.060(1.52) .058(1.48)
.120(3.04) .117(2.96)
.181(4.60) .173(4.40)
.016(0.41) .014(0.35)
Dimensions in inches and (millimeters)
E(Rlaeticntgrsicaat 2l5CoChaamrabicentet treimstpiecrsature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -40
-
Collector-Emitter Breakdown Volt...