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MJD41C

GME
Part Number MJD41C
Manufacturer GME
Description Epitaxial Planar NPN Transistor
Published May 17, 2018
Detailed Description Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically sim...
Datasheet PDF File MJD41C PDF File

MJD41C
MJD41C


Overview
Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application.
Pb Lead-free  Electrically similar to popular and TIP41C.
 Straight Lead.
APPLICATIONS  General purpose amplifier.
 Low speed switching applications.
Production specification MJD41C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 6A ICP Collector Current -Peak 10 A IB Base Current 2A PC Collector Power Dissipation 1.
25 W Tj ,Tstg Junction and Storage temperature range ...



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