DatasheetsPDF.com

MJD3055

Part Number	MJD3055
Manufacturer	TAITRON
Description	SMD Power Transistor
Published	May 17, 2018
Detailed Description	SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low...
Datasheet	MJD3055 PDF File

Overview

SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.
3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 70 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 10 IB Base Current 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.
16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°...

Similar Datasheet

MJD3055 Silicon NPN Power Transistor - Inchange Semiconductor
MJD3055 General Purpose Amplifier - Fairchild
MJD3055 Complementary Silicon Power Transistors - ST Microelectronics
MJD3055 Complementary Power Transistors - ON
MJD3055 SILICON POWER TRANSISTORS - Motorola
MJD3055 Epitaxial Planar NPN Transistor - GME
MJD3055 SMD Power Transistor - TAITRON
MJD3055T4 Low voltage NPN power transistor - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)