JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD2955 TRANSISTOR (PNP)
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate
Transistors
MJD2955
TRANSISTOR (
PNP)
FEATURES y Designed for General Purpose Amplifier and Low Speed
Switching Applications y Electrically Simiar to MJD3055 y DC Current Gain Specified to10 Amperes
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current -Continuous
-10
A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
TO-251-3L
1.BASE 2.COLLECTOR 3.EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-200 mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
ICBO ICEO
VCB=-70V,IE=0...
