SMD Power Transistor (PNP) MJD2955
SMD Power Transistor (PNP)
Features
• Designed for general purpose amplifier and low ...
SMD Power
Transistor (
PNP) MJD2955
SMD Power
Transistor (
PNP)
Features
Designed for general purpose amplifier and low speed switching applications RoHS compliance
Mechanical Data
Case: Terminals:
Weight:
D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams
D-PACK (TO-252)
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MJD2955
Marking Code
MJD2955
VCEO
Collector-Emitter Voltage
60
VCBO VEBO
Collector-Base Voltage Emitter-Base Voltage
70 5
IC Collector Current Continuous IB Base Current
10 6
Power Dissipation at TC=25°C
PD
Derate above 25°C
20 0.16
*PD TJ, TSTG
Power Dissipation at TA=25°C
Derate above 25°C Operating and Storage Junction Temperature Range
1.75 0.014 -55 to +150
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Unit
V V V A A W W/°C W W/°C °C
Rev. B/CZ Page 1 of 4
SMD Po...