Production specification
Epitaxial Planar PNP Transistor
FEATURES
Lead formed for surface mount
Pb
applications.
...
Production specification
Epitaxial Planar
PNP Transistor
FEATURES
Lead formed for surface mount
Pb
applications.
Lead-free
Straight lead.
Electrically similar to popular MJE2955T.
DC current gain specified to 10A.
APPLICATIONS
Low speed switching applications.
D-PAK for surface mount applications.
MJD2955
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-70 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-10 A
IB Base Current
-6 A
PC Collector Power Dissipation
1.75 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)031 Rev.A
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Production specification
Epitaxial Planar
PNP Transistor
MJD2955
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-emitter sustaining voltage
V...
