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MJD127

Part Number	MJD127
Manufacturer	GME
Description	Epitaxial Planar PNP Transistor
Published	May 17, 2018
Detailed Description	Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Le...
Datasheet	MJD127 PDF File

Overview

Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.
 Built-in a Damper Diode at E-C.
Pb Lead-free  Lead Formed for Surface Mount Applications.
 Straight Lead.
 Complement to MJD122.
Production specification MJD127 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -8 A ICP Collector Power Dissipation -16 A IB Base Current -120 mA PC Collector Power Dissipation 1.
5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)030 Rev.
A www...

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