FCX591

Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 FEATURES  Complementary type:FCX491. Pb Lead-free ORDERING INFORMATION Type No. Marking FCX591 P1 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 ICM Peak Pulse Current -2 IC Collector Current -Continuous -1 IB Base Current -0.2 PD Power Dissipation 1 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V A A A W ℃ E074 Rev.A www.gmesemi.com 1 Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base ...