REPLACEMENT TYPE : BST39.BST40
FEATURES Low Current High Voltage
HEBST39.40(NPN)
GENERAL PURPOSE TRANSISTOR
MAXIMU...
REPLACEMENT TYPE : BST39.BST40
FEATURES Low Current High Voltage
HEBST39.40(
NPN)
GENERAL PURPOSE
TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
BST39 BST40
VCBO
400 300
Collector-Emitter Voltage
BST39 BST40
VCEO
350 250
Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature Storage Temperature
VEBO IC PC RθJA TJ Tstg
5 100 500 250 150 -55~+150
Unit
V
V
V mA mW °C/W °C °C
SOT-89 1:BASE 2:COLLECTOR 3:EMITTER
MARKING: BST39:AT1 BST40:AT2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage
VCBO
BST39 IC=100uA,IE=0
BST40
400 300
V
Collector-Emitter Breakdown Voltage
VCEO
IC=1mA,IB=0
BST39 BST40
350 250
V
Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector...