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BCX69

GME

PNP Silicon AF Transistors

PNP Silicon AF Transistors FEATURES  For general AF applications.  High collector current.  High current gain. Pb ...


GME

BCX69

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Description
PNP Silicon AF Transistors FEATURES  For general AF applications.  High collector current.  High current gain. Pb Lead-free  Low collector-emitter saturation voltage.  Complementsry type:BCX68. Production specification BCX69 ORDERING INFORMATION Type No. Marking BCX69 BCX69-10 BCX69-16 BCX69-25 CE CF CG CH SOT-89 Package Code SOT-89 SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -25 VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -20 -5 -1 ICM Collector Current -Peak -2 IB Base Current -0.1 IBM Peak Base Current -0.2 PD Total Power Dissipation 1 Tj,Tstg Junction and Storage Temperature -65 to +150 Unit V V V A A A A W ℃ E068 Rev.A www.gmesemi.com 1 Production specification PNP Silicon AF Transistors BCX69 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Co...




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