HED874

REPLACEMENT TYPE : 2SD874 FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissipation  Mini Power Type Package HED874 (NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Collector-Emitter Voltage VCEO 25 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 1 Collector Power Dissipation PC 500 Thermal Resistance From Junction to Ambient RθJA 250 Junction Temperature TJ 150 Storage Temperature Tstg -55~+150 Unit V V V A mW °C/W °C °C SOT-89 1:BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=10uA,IE=0 Collector-Emitter Breakdown Voltage VCEO IC=2mA,IB=0 Emitter-Base Breakdown Voltage VEBO IE=10mA,IC=0 Collector Cut-off Current ICBO VCB=20V,IE=0 Emitter Cut-off Current IEBO VEB=4V,IC=0 DC Current Gain hFE...