2SD1815

Production specification NPN Epitaxial Planar Silicon Transistors FEATURES  Adoption of FBET,MBIT processes. Pb  Large current capacity and wide ASO. Lead-free  Low collector-to-emitter saturation voltage.  Excllent linearity of hFE.  High fT.  Fast switching time. 2SD1815 APPLICATIONS  Relay drivers,high-speed inverters, Converters,and other high-current Switching applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6V IC Collector Current 3A ICP Collector Power Dissipation 6A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W019 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Planar Silicon Transistors 2SD1815 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter...