Medium power transistor(80V,0.7A)
FEATURES
High breakdown voltage and high current.
Complementary pair with 2SB1189...
Medium power
transistor(80V,0.7A)
FEATURES
High breakdown voltage and high current.
Complementary pair with 2SB1189.
Pb
Lead-free
Production specification
2SD1767
ORDERING INFORMATION
Type No.
Marking
2SD1767
DCP/DCQ/DCR
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
80
Units V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
0.7 A
PC Collector Dissipation
500 mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
℃
E058 Rev.A
www.gmesemi.com
1
Production specification
Medium power
transistor(80V,0.7A)
2SD1767
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
80
V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO IE=50μA,IC=0
...
