Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type. NPN silicon transistor.
Pb
Lead-free
Production specification
2SD1760
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Vo...
