BCP54

BCP54...BCP56 NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP) 4 3 2 1 VPS05163 Type BCP54 BCP54-10 BCP54-16 BCP55 BCP55-10 BCP55-16 BCP56 BCP56-10 BCP56-16 Marking BCP 54 1=B BCP 54-10 1 = B BCP 54-16 1 = B BCP 55 1=B BCP 55-10 1 = B BCP 55-16 1 = B BCP 56 1=B BCP 56-10 1 = B BCP 56-16 1 = B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 1 Nov-29-2001 BCP54...BCP56 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE
1k Collector-base voltage Emitter-base voltage Symbol VCEO VCER VCBO VEBO BCP54 45 45 45 5 BCP55 60 60 60 5 BCP56 80 100 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C Thermal Resistance Junction - soldering point1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-29-2001 BCP54...BCP56 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 100 20 nA µA...