BCP53

BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS ARE BCP55 AND BCP56 RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CER V EBO IC I CM IB I BM P tot T stg Tj Parameter BCP52 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K Ω ) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature -60 -60 -60 -5 -1 -1.5 -0.1 -0.2 2 -65 to 150 150 Value BCP53 -100 -80 -100 V V V V A A A A W o o Unit C C 1/4 October 1997 BCP52/53 THERMAL DATA R thj-amb R thj-tab Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -30 V V CB = -30 V I C = -100 µ A for BCP52 for BCP53 I C = -20 mA for BCP52 for BCP53 I C = -100 µ A for BCP52 for BCP53 I C = -10 µ A T j = 12...