Document
BFR180
NPN Silicon RF Transistor
For low-power amplifiers in mobile
3
communication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
F = 2.1 dB at 900 MHz
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR180
Maximum Ratings Parameter
Marking RDs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT23
Value 8 10 10 2 4 0.5 30 150 -65 ... 150 -65 ... 150 mW °C mA Unit V
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 127 °C 1) Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point2) RthJS
780
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-27-2001
BFR180
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit
2
Jun-27-2001
BFR180
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 1 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz IC = 1 mA, VCE = 5 V, ZS = ZL = 50 , |S21e|2 8 5.5 13.5 10.5 Gms 2.1 2.25 F Ceb 0.1 Cce 0.18 Ccb 0.25 0.4 fT 5 7 typ. max.
Unit
GHz pF
dB
1G ms
= |S21 / S12 |
3
Jun-27-2001
BFR180
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
0.18519 26.867 1.9818 3.2134 1.6195 60 3.2473 14.866 1.0202 1.1812 2.2648 0 3
fA V V -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
94.687 0.025252 20.325 0.012138 1.4255 3.7045 1.1812 0.3062 0 0.30423 0 0 0.87906
A A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.0236 130.93 0.93013 6.1852 0.01 0.56 0.41827 0.22023 183.69 0.08334 0.75 1.11 300
fA fA mA
fF ps mA V ns -
V deg fF -
V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L B.