Document
NPN Silicon RF Transistor
q
BFQ 74
For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. Hermetically sealed ceramic package. HiRel/Mil screening available.
q q
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 74 Marking 74 Ordering Code (tape and reel) Q62702-F788 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Peak collector current, f ≥ 10 MHz Base current Total power dissipation, TS ≤ 115 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB Ptot Tj TA Tstg
Values 16 25 25 2 35 45 5 300 175 – 65 … + 175 – 65 … + 175
Unit V
mA
mW ˚C
280 200
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ BFQ 74 74
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 15 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 15 mA, VCE = 10 V Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA Base-emitter voltage IC = 10 mA, VCE = 10 V V(BR)CE0 ICES ICB0 IEB0 hFE 50 50 VCEsat VBE – – 110 120 0.13 0.78 250 – 0.3 – V 16 – – – – – – – – 100 50 10 V
µA
Values typ. max.
Unit
nA
µA
–
BFQ BFQ 74 74
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz IC = 15 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 Ω IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 Ω IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt Power gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Ω Transducer gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 10 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω Third order intercept point IC = 25 mA, VCE = 10 V, f = 800 MHz fT – – Ccb Cce Cibo Cobs F – – – Gma1) Gms2) I S21e I 2 – – – 0.9 1.4 2.5 14 9.8 9.8 160 – – 2.9 – – – – mV – – – – 4.4 6 0.3 0.4 1.35 0.7 – – 0.4 – – – dB pF GHz Values typ. max. Unit
Vo.