DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68 NPN 4 GHz wideband transistor
Product specification File under Discrete Semico...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68
NPN 4 GHz wideband
transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband
transistor
DESCRIPTION
NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Vo PARAMETER collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 110 °C IC = 240 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C Ic = 240 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C WARNING Product and environmental safety - toxic materials open base CONDITIONS TYP. − − − 4 1.6 PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
fpage
BFQ68
4 1 3
2 Top view
MBK187
Fig.1 SOT122A.
MAX. 18 300 4.5 − −
UNIT V mA W GHz V
PL1 ITO
output power at 1 dB gain compression third order intercept point
28 47
− −
d...