BFQ67T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT416 (SC-75) envelope. APPLICATIONS Wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base open collector − − − − − −65 − MIN. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure Ts ≤ 75 °C; note 1 CONDITIONS open emitter open base MIN. − − − − IC = 15 mA; VCE = 5 V; Tj = 25 °C 60 IC = 15 mA; VCE = 8 V; f = 2 GHz; − Tamb = 25 °C IC = 15 mA; VCE = 8 V; f = 1 GHz; − Tamb = 25 °C IC = 5 mA; VCE = 8 V; f = 1 GHz − TYP. − −...