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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ34 NPN 4 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN transistor encapsulated in a 4 lead SOT122A envelope with a ceramic cap. All leads are isolated from the stud. It is primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION Code: BFQ34/01 collector emitter base emitter
2 Top view
lfpage
BFQ34
4 1 3
MBK187
Fig.1 SOT122A.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Vo PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 160 °C IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C; dim = −60 dB f(p+q-r) = 793.25 MHz IC = 120 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C IC = 120 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. open base CONDITIONS open emitter TYP. − − − − 1.2 IC = 150 mA; VCE = 15 V; f = 500 MHz 4 MAX. 25 18 150 2.7 − − UNIT V V mA W GHz V
PL1 ITO
output power at 1 dB gain compression third order intercept point
26 45
− −
dBm dBm
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Tc = 160 °C open emitter open base open collector CONDITIONS MIN. − − − − − −65 −
BFQ34
MAX. 25 18 2 150 2.7 150 200
UNIT V V V mA W °C °C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO hFE fT PARAMETER collector cut-off current DC current gain transition frequency CONDITIONS IE = 0; VCB = 15 V IC = 75 mA; VCE = 15 V IC = 150 mA; VCE = 15 V IC = 150 mA; VCE = 15 V; f = 500 MHz Cc Ce Cre Cc-s F GUM Vo PL1 ITO Notes 1..
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