DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ131 NPN video transistor
Product specification File under Discrete Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ131
NPN video
transistor
Product specification File under Discrete Semiconductors, SC05 1995 Sep 26
Philips Semiconductors
Product specification
NPN video
transistor
FEATURES Low output capacitance High dissipation High gain bandwidth product. PINNING APPLICATIONS Buffer stage in colour monitors between the video amplifier and the input of the video module Pre-stage (cascode driver) in discrete video amplifiers. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Cre Tj PARAMETER collector-emitter voltage collector current (DC) total power dissipation transition frequency feedback capacitance junction temperature up to Ts = 60 °C; see Fig.2 IC = 100 mA; VCE = 10 V; see Fig.4 IC = 0; VCE = 10 V; see Fig.5 open base CONDITIONS − − − 4 1.2 − TYP. PIN 1 2 3 DESCRIPTION base collector emitter DESCRIPTION
NPN silicon
transistor in a 3-lead plastic SOT54 package.
1 2 3
BFQ131
MSB033
Fig.1 Simplified outline SOT54.
MAX. 18 150 1.9 − − 175
UNIT V mA W GHz pF °C
1995 Sep 26
2
Philips Semiconductors
Product specification
NPN video
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts = the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 60 °C; note 1; see Fig.2 open...