BFP67/BFP67R/BFP67W
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precauti...
BFP67/BFP67R/BFP67W
Vishay Telefunken
Silicon
NPN Planar RF
Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise small signal amplifiers up to 2 GHz. This
transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Features
D Small feedback capacitance D Low noise figure D High transition frequency
2 1 1 2
94 9279
13 579
94 9278
95 10831
3
4
4
3
BFP67 Marking: 67 Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP67R Marking: 67R Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
13 653
13 566
3
4
BFP67W Marking: W67 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85017 Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600 1 (13)
BFP67/BFP67R/BFP67W
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 200 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
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