isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
:hFE= 2000(Min) @ IC= 3A ·Collector-Emitt...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain
:hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and low-speed
switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
8
A
ICM
Collector Current-peak
12
A
IB
Base Current
Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
0.8
A
40 W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1309
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ,RL= ...