BFP640

BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Product description The BFP640 is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. 42 GHz and high linearity characteristics at low currents mItsatkreanthsiistidoenvfirceeqpuaerntcicyuflTaorlfy suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NFmin = 0.65 dB at 1.9 GHz, 3 V, 6 mA High gain Gma = 24 dB at 1.9 GHz, 3 V, 25 mA OIP3 = 26.5 dBm at 1.9 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) in GNSS receivers LNAs in satellite radio (SDARs, DAB) receivers LNAs in multimedia applications such as CATV and FM radio Device information Table 1 Part information Product name / Ordering code BFP640 / BFP640H6327XTSA1 Package SOT343 Pin configuration Marking 1 = B 2 = E 3 = C 4 = E R4s Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Pieces / Reel 3000 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 3.0 2019-01-25 BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . ....