Document
DN2625
N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options
Features
• Very Low Gate Threshold Voltage • Designed to be Source-driven • Low Switching Losses • Low Effective Output Capacitance • Designed for Inductive Loads
Applications
• Medical Ultrasound Beamforming • Ultrasonic Array-focusing Transmitter • Piezoelectric Transducer Waveform Drivers • High-speed Arbitrary Waveform Generator • Normally-on Switches • Solid-state Relays • Constant Current Sources • Power Supply Circuits
General Description
The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device.