Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GH...
Low Noise Silicon Bipolar RF
Transistor
For highest gain and low noise amplifier Outstanding Gms = 21.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.9 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package
with visible leads Qualification report according to AEC-Q101 available
3 4
BFP540
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540
Marking
Pin Configuration
ATs 1=B 2=E 3=C 4=E -
-
Package SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage TA = 25 °C TA = -55 °C
VCEO
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current Total power dissipation1)
IB Ptot
TS ≤ 77°C
Junction temperature
TJ
Ambient temperature
TA
Storage temperature
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5 4 14 14 1 80 8 250
150 -65 ... 150 -65 ... 150
Unit V
mA mW °C
1 2013-09-20
BFP540
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 290
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 14 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5...
