BFP520F

Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.95 dB at 1.8 GHz For oscillators up to 15 GHz Transition frequency fT = 45 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 available BFP520F 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520F Marking Pin Configuration APs 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 98 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to pcb Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS 1 Value 2.5 2.4 10 10 1 50 5 120 150 -55 ... 150 Unit V mA mW °C Value 430 Unit K/W 2013-09-19 BFP520F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC curren...