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BFP183R

Infineon Technologies AG

NPN Silicon RF Transistor


Description
BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP183R Maximum Ratings Parameter Marking RHs 1=E Pin Configuration 2=C 3=E 4=B Package SOT143R Unit V Symbol VCE...



Infineon Technologies AG

BFP183R

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