Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 2 mA ...
Low Noise Silicon Bipolar RF
Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available
3 4
BFP183
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP183
Marking
Pin Configuration
RHs 1=C 2=E 3=B 4=E -
-
Package SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 76 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 65 5 250
150 -55 ... 150
Unit V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
295 K/W
1TS is measured on the collector lead at the soldering point to the...
