Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 0.5 m...
Low Noise Silicon Bipolar RF
Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available
3 4
BFP181
2 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP181
Marking
Pin Configuration
RFs 1 = C 2 = E 3 = B 4 = E -
-
Package SOT143
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 75 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
12 20 20 2 20 2 175
150 -55 ... 150
V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
430
1TS is measured on the collector lead at the soldering point of the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
K/W
1 2013-10-15
BFP181
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE...