BFP 136W
NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems
• fT = 5.5GHz
• Gold metalization for ...
BFP 136W
NPN Silicon RF
Transistor For power amplifier in DECT and PCN systems
fT = 5.5GHz
Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B
Package SOT-343
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ... + 150 ≤ 90 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 60 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 50 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 80 mA, VCE = 5 V
Semiconductor Group
2
Jan-20-1997
BFP 136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transitio...
