Production specification
NPN Triple Diffused Planar Silicon Transistor
FEATURES
High breakdown voltage(VCBO≥900V). ...
Production specification
NPN Triple Diffused Planar Silicon
Transistor
FEATURES
High breakdown voltage(VCBO≥900V). Fast switching speed.
Pb
Wide ASO.
Lead-free
2SC3149
PPLICATIONS
800V/1.5A Switching
Regulator Applications.
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
900 V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current
1.5 A
ICP Collector Current(Pulse)
5A
IB Base Current
0.8 A
PC Collector Power Dissipation
1.2 W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V012 Rev.A
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Production specification
NPN Triple Diffused Planar Silicon
Transistor 2SC3149
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
VCBO
IC=1mA,IE=0
900
V
Collector-emitter breakdown voltage...
