BFN23

BFN 23 PNP High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert PNP 250 mW SOT-23 (TO-236) 0.01 g Dimensions / Maße in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Collector-Emitter-voltage Emitter-Base-voltage B open E open RBE = 2.7 kS C open - VCE0 - VCB0 - VCER - VEB0 Ptot - IC - ICM Tj TS Grenzwerte (TA = 25/C) BFN 23 250 V 250 V 250 V 5V 250 mW 1) 50 mA 100 mA 150/C - 65…+ 150/C Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 200 V IE = 0, - VCB = 200 V, Tj = 150/C - VCB = 250 V, RBE = 2.7 kS - VCB = 250 V, RBE = 2.7 kS, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IEB0 – - ICB0 - ICB0 - ICBR - ICBR – – – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 100 nA 20 :A 1 :A 50 :A 10 :A Collector-Base cutoff current – Kollektorreststrom 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Mon...