BFN19

PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN18 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 BFN19 1 2 3 2 Type BFN19 Marking DH Pin Configuration 1=B 2=C 3=E Package SOT89 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 130 °C Junction temperature Storage temperature VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 300 300 5 200 500 100 200 1 150 -65 ... 150 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 20 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA W °C Unit K/W 1 2011-09-30 BFN19 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 - - IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 250 V, IE = 0 VCB = 250 V, IE = 0 , TA = 150 °C ICBO - - 0.1 - - 20 Emitter-base cutoff current VEB = 5 V, IC = 0 IEBO - - 100 DC current gain1) ...