sapcon®
●Absoolute Maximum Rantings (Tc=25℃)
PARAMETER
SYMBOL VALUE UNIT
Drain-Source Voltage
VDSS
600
V
Drain Current-continuous
ID
0.5
A
Drain Current-pulse Gate-Source Voltage
IDM VGSS
2.0 ±30
A V
Power Dissipation Junction Temperature Storage Temperature
PD Tj TsTg
3.0 150 -55~+150
W ℃ ℃
SVF1N60B
N-CHANNEL MOSFET
● Electronic Charact...
