NPN Silicon High-Voltage Transistors
BFN 16 BFN 18
Suitable for video output stages in TV sets and switching power sup...
NPN Silicon High-Voltage
Transistors
BFN 16 BFN 18
Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 17, BFN 19 (
PNP)
q
Type BFN 16 BFN 18
Marking DD DE
Ordering Code (tape and reel) Q62702-F885 Q62702-F1056
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BFN 16 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 250 250
Values BFN 18 300 300 5 200 500 100 200 1 150
Unit V
mA
W ˚C
– 65 … + 150
75 20
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BFN 16 BFN 18
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 16 BFN 18 Collector-base breakdown voltage IC = 100 µA BFN 16 BFN 18 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 200 V VCB = 250 V VCB = 200 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 mA, VCE = 10 V IC...