BFG94

DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES High power gain Low noise figure Low intermodulation distortion Gold metallization ensures excellent reliability. DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems. 1 Top view BFG94 PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain output voltage up to Ts = 140 °C (note 1) IC = 0; VCE = 10 V; f = 1 MHz IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 45 mA; VCE = 10 V; dim = −60 dB; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C open base CONDITIONS open emitter MIN. TYP. MAX. UNIT − − − − − 4 11.5 − − − − − − 6 13.5 500 15 12 60 700 0.8 − − − V V mA mW pF GHz dB mV PL1 Note output power at 1 dB gain compression − 21.5 − dBm 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 6...