Document
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE Complementary to KTC8050.
KTC8550
EPITAXIAL PLANAR PNP TRANSISTOR
BC
JA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING -35 -30 -5 -800 800 625 150
-55 150
UNIT V V V mA mA mW
L M
C
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO V(BR)CBO V(BR)CEO hFE(1) (Note)
hFE(2) VCE(sat)
VBE fT
Collector Output Cap.