Document
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. Suffix U : Qualified to AEC-Q101. ex) KTC601E-Y-RTK/HU
A A1 CC
KTC601E
EPITAXIAL PLANAR NPN TRANSISTOR
B B1
1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05
2 B 1.6+_ 0.05 B1 1.2+_ 0.05
3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05
P P J 0.12+_ 0.05 P5
JD
H
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg
RATING 60 50 5 150 30 200 150
-55 150
UNIT V V V mA mA mW
1. Q1 BASE 2. Q1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q1 COLLECTOR
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
54
Q1 Q2
12 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO hFE (Note) VCE(sat) fT Cob
VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1
Noise Figure
NF VCE=6V, IC=0.1 , f=1 , Rg=10
Note : hFE Classification Y(4):120 240, GR(6):200 400
Marking
MIN. -
120 80 -
TYP. 0.1 2 1.0
MAX. UNIT. 0.1 0.1 400 0.25 V 3.5 10
54 Lot No.
L 4Type Name
2018. 04. 10
Revision No : 4
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COLLECTOR CURRENT I C (mA)
KTC601E
I C - VCE
240
6.0mA 5.0mA
COMMON EMITTER Ta=25 C
200 3.0mA 2.0mA
160 1.0mA
120
80 0.5mA 40 I B=0.2mA
0 0
012345 67
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN h FE
hFE - IC
1k COMMON EMITTER
500
300 Ta=100 C
Ta=25 C 100 Ta=-25 C
VCE =6V
50 30
VCE =1V
10 0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
VCE(sat) - I C
1 COMMON EMITTER
0.5 IC/I B=10 0.3
0.1 Ta=100 C 0.05
0.03
Ta=25 C Ta=-25 C
0.01 0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
TRANSITION FREQUENCY f T (MHz)
fT - IC
3k COMMON EMITTER VCE =10V
1k Ta=25 C
500 300
100
50 30
10 0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
2018. 04. 10
Revision No : 4
BASE CURRENT IB (μA) Ta=100 C Ta=25 C Ta=-25 C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
VBE(sat) - I C
10 COMMON EMITTER
5 IC/I B=10 Ta=25 C
3
1
0.5 0.3
0.1 0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
I B - VBE
3k COMMON
1k EMITTER VCE =6V
300
100
30
10
3
1
0.3 0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1.2
2/3
COLLECTOR POWER DISSIPATION PC (mW)
KTC601E
250 200 150
100 50
0 0
Pc - Ta
25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C)
150
2018. 04. 10
Revision No : 4
3/3
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