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KTC601E Dataheets PDF



Part Number KTC601E
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KTC601E DatasheetKTC601E Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. Suffix U : Qualified to AEC-Q101. ex) KTC601E-Y-RTK/HU A A1 CC KTC601E EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05 2 B 1.6+_ 0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05.

  KTC601E   KTC601E


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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. Suffix U : Qualified to AEC-Q101. ex) KTC601E-Y-RTK/HU A A1 CC KTC601E EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05 2 B 1.6+_ 0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 P P J 0.12+_ 0.05 P5 JD H MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 50 5 150 30 200 150 -55 150 UNIT V V V mA mA mW 1. Q1 BASE 2. Q1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q1 COLLECTOR TESV EQUIVALENT CIRCUIT (TOP VIEW) 54 Q1 Q2 12 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking MIN. - 120 80 - TYP. 0.1 2 1.0 MAX. UNIT. 0.1 0.1 400 0.25 V 3.5 10 54 Lot No. L 4Type Name 2018. 04. 10 Revision No : 4 123 1/3 COLLECTOR CURRENT I C (mA) KTC601E I C - VCE 240 6.0mA 5.0mA COMMON EMITTER Ta=25 C 200 3.0mA 2.0mA 160 1.0mA 120 80 0.5mA 40 I B=0.2mA 0 0 012345 67 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN h FE hFE - IC 1k COMMON EMITTER 500 300 Ta=100 C Ta=25 C 100 Ta=-25 C VCE =6V 50 30 VCE =1V 10 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 1 COMMON EMITTER 0.5 IC/I B=10 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 300 TRANSITION FREQUENCY f T (MHz) fT - IC 3k COMMON EMITTER VCE =10V 1k Ta=25 C 500 300 100 50 30 10 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 300 2018. 04. 10 Revision No : 4 BASE CURRENT IB (μA) Ta=100 C Ta=25 C Ta=-25 C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) VBE(sat) - I C 10 COMMON EMITTER 5 IC/I B=10 Ta=25 C 3 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT IC (mA) 300 I B - VBE 3k COMMON 1k EMITTER VCE =6V 300 100 30 10 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE VBE (V) 1.2 2/3 COLLECTOR POWER DISSIPATION PC (mW) KTC601E 250 200 150 100 50 0 0 Pc - Ta 25 50 75 100 125 AMBIENT TEMPERATURE Ta ( C) 150 2018. 04. 10 Revision No : 4 3/3 .


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