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BFG193

NPN Silicon RF Transistor

Description

BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 4 F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG193 Maximum Ratings Parameter Marking BFG193 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symb...

Infineon Technologies AG

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