BFG135A

BFG 135A NPN Silicon RF Transistor
For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
fT = 6 GHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG 135A Maximum Ratings Parameter Marking BFG135A 1=E Pin Configuration 2=B 3=E 4=C Package SOT-223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 25 25 2 150 20 1 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS
100 °C F) Junction temperature Ambient temperature Storage temperature mA W °C Thermal Resistance Junction - soldering point RthJS
50 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C,...