N-Channel Enhancement Mode MOSFET
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31518 uses advanced trench technolog...
Description
T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM31518 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 13.5mΩ @ VGS=10V Reliable and Rugged Lead free product is available TO‐220 Package
Application
PWM applications Load switch Power management
DATASHEET
TDM31518
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current
Drain Current @ Continuous
Drain Current @ Current‐Pulsed (Note 1)
Maximum Power Dissipation
Drain Current @ Continuous
Maximum Power Dissipation (TA=25℃) Avalanche Energy, Single pulse(L=0.5mH)
Symbol
VDS
VGS IS(TC=...
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