T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 10.5mΩ @ VGS=10V
High Power a...
